Alkanethiolate Self-Assembled Monolayers As a Negative or Positive Resist for Electron Lithography

被引：10

作者：

Wu, Yi-Te ^{[1
]}

Liao, Jiunn-Der ^{[1
,2
]}

Weng, Chih-Chiang ^{[1
]}

Hesieh, Yi-Ta ^{[1
]}

Chen, Chia-Hao ^{[3
]}

Wang, Ming-Chen ^{[4
]}

Zharnikov, Michael ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan

[4] Yuanpei Univ, Dept Biomed Engn, Hsinchu 30015, Taiwan

[5] Univ Heidelberg, D-69120 Heidelberg, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2009年 / 113卷 / 11期

关键词：

LOCAL OXIDATION NANOLITHOGRAPHY; CHEMICAL LITHOGRAPHY; IMPRINT TECHNIQUE; MICROMETER; NANOSTRUCTURES; PHOTOEMISSION; FABRICATION; GENERATION; RESOLUTION; GRADIENTS;

D O I：

10.1021/jp808617y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8 - 10 mC/cm(2) (50 eV electrons) under the conditions of our experiments.

引用

页码：4543 / 4548

页数：6

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