Minority-carrier lifetime damage coefficient of irradiated InP

Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeW alpha particle irradiation of tl-type (4.5 X 10(15) and 1.3 X 10(17) cm(-3)) and p-type (2.5 X 10(17) cm(-3)) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10(4) and 10(5), respectively. (C) 1997 American Institute of Physics.