Enhancement of low-field magnetoresistance in Ce doped manganite Sm0.55Sr0.45MnO3

被引：11
|
作者：
Suryanarayanan, R [1 ]
Gasumyants, V
机构：
[1] Univ Paris 11, Lab Phys Chim Etat Solide, UMR 8648, Bat 414, F-91405 Orsay, France
[2] St Petersburg State Tech Univ, Dept Semicond Phys & Nanoelect, St Petersburg 195251, Russia
来源：
SOLID STATE COMMUNICATIONS | 2002年 / 123卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
magnetically ordered materials; perovskites; electronic transport; semiconductor-metal transition; magnetoresistance;
D O I：
10.1016/S0038-1098(02)00356-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the magnetization, resistivity and magnetoresistance measurements on polycrystalline samples of Sm0.55Sr0.45-xCexMnO3 (x = 0 and 0.05). Substitution of Ce(x = 0.05) reduced the para-ferromagnetic transition from similar to140 K (x = 0) to 90 K. For x = 0, the colossal magnetoresistance (CMR) (- 100(rho(B) - rho(o))/p(o)) effect of 55% (143 K) was observed in a field of 0.6 Oe. On the other hand, for the x = 0.05 sample, at 93 K. the CMR effect which was 32% in the field of 65 Oe increased to 87% in the field of 0.6 T. Our data rule out grain boundary effects as the principal cause but point out the applicability of the phase separation model. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：353 / 356
页数：4
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