Design and Analysis of a W-band 9-Element Imaging Array Receiver Using Spatial-Overlapping Super-Pixels in Silicon

被引:40
|
作者
Caster, Francis, II [1 ]
Gilreath, Leland [1 ]
Pan, Shiji [1 ]
Wang, Zheng [1 ]
Capolino, Filippo [1 ]
Heydari, Payam [1 ]
机构
[1] Univ Calif Irvine, Dept Elect Engn & Sci, Irvine, CA 92697 USA
基金
美国国家科学基金会;
关键词
BiCMOS; direct detection receiver; focal-plane array; imaging receiver; low-noise amplifier; millimeter-wave detector; on-chip antenna; passive imaging; power combiner; power detector; power splitter; SiGe; spatial-overlapping pixels; true-time delay; W-band; ANTENNAS; POWER;
D O I
10.1109/JSSC.2014.2310744
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A W-band direct-detection-based receiver array is presented using a new concept of spatial-overlapping super-pixels for millimeter-wave imaging applications in an advanced 0.18 m BiCMOS process. The use of spatial-overlapping super-pixels results in 1) improved SNR at the pixel level through a reduction of spillover losses, 2) partially correlated adjacent super-pixels, 3) a 2x2 window averaging function in the RF domain, 4) the ability to compensate for the systematic phase delay and amplitude variations due to the off-focal-point effect for antennas away from the focal point, and 5) the ability to compensate for mutual coupling effects among the array elements. The receiver chip achieves a measured peak coherent responsivity of 1,150 MV/W, an incoherent responsivity of 1,000 MV/W, a minimum NEP of 0.28 fW/Hz(1/2) and a front-end 3-dB bandwidth from 87-108 GHz, while consuming 225 mW per receiver element. The measured NETD of the SiGe receiver chip is 0.45 K with a 20 ms integration time.
引用
收藏
页码:1317 / 1332
页数:16
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