Monte Carlo simulations of monatomic steps dynamics on Si(100)-(2x1)

被引：6
|
作者：
Williams, FJ [1 ]
Sanchez, JR [1 ]
Aldao, CM [1 ]
机构：
[1] UNIV NACL MAR DEL PLATA,INST MAT SCI & TECHNOL,CONICET,RA-7600 MAR DEL PLATA,ARGENTINA
来源：
SURFACE SCIENCE | 1997年 / 391卷 / 1-3期
关键词：
computer simulations; models of surface kinetics; silicon; surface structure; vicinal single crystal surfaces;
D O I：
10.1016/S0039-6028(97)00490-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
By means of Monte Carlo simulations the frozen pattern of a B-type step edge in the Si(100)-(2 x 1) surface is simulated. Sets of two dimers are attached and detached from the step according to the number of nearest and next-nearest neighbors. Average kink length, average kink separation and correlation length from experiments and modeling are presented in order to check the quality of our results. Experimental results are well reproduced by using measured experimental rates. The characteristics of the resulting step profile are also analyzed as a function of the step width. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：260 / 266
页数：7
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