Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate

被引:1
|
作者
Ding, Xun [1 ,2 ]
Zang, Kai [3 ]
Fei, Yueyang [1 ,2 ]
Zheng, Tianzhe [1 ,2 ]
Su, Tao [1 ,2 ]
Morea, Matthew [3 ]
Jin, Ge [1 ,2 ]
Harris, James S. [3 ]
Jiang, Xiao [1 ,2 ]
Zhang, Qiang [1 ,2 ]
机构
[1] Univ Sci & Technol China, Dept Modern Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Ctr Excellence & Synerget Innovat, Ctr Quantum Informat & Quantum Phys, Hefei 230026, Anhui, Peoples R China
[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
基金
中国国家自然科学基金;
关键词
Single-photon avalanche diode (SPAD); Pile-up correction; Photon detection efficiency (PDE); Timing jitter; QUENCHING-CIRCUITS; TECHNOLOGY; DETECTORS; LIFETIMES;
D O I
10.1007/s11082-018-1517-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Although as a single-photon detector, the single-photon avalanche diode (SPAD) may be applied to multi-photon conditions. At a minimum, SPADs with a high dark count rate (DCR) demand a higher value of photon number per pulse to improve the signal-to-noise ratio. In this case, and without correction, severe pile-up distortion may induce a system error in the measurement of photon detection efficiency (PDE) and timing jitter. In this paper, we study the pile-up distortion in SPAD characterization by numerical simulation and experimentation, and introduce a pile-up correction method for the precise characterization of PDE and timing jitter in immature SPADs with an unintentionally high DCR. The results of this study are useful in the development of future SPADs.
引用
收藏
页数:11
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