Modeling of Bonding Wires Array and Its Application in the Design of a 120 W X-band Internally Matched AlGaN/GaN Power Amplifier<bold> </bold>

被引：0
|
作者：
Gu, L. [1 ]
Tang, S. [1 ]
Xu, Y. [1 ]
Yang, Y. [2 ]
Chen, T. [1 ]
机构：
[1] Nanjing Elect Devices Inst, POB 1601, Nanjing 210016, Jiangsu, Peoples R China
[2] Macquarie Univ, Dept Engn, Sydney, NSW 2109, Australia
来源：
PROCEEDINGS OF THE 2016 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA) | 2016年
关键词：
CMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposed a novel modeling method of bonding wires array for internally matched network for high power and high efficiency power amplifier design. Based on this modeling method, a 120 W X-band internally-matched AlGaN/GaN PA under continues wave (CW) condition is presented. The proposed power amplifier can provide a relatively stable output power above 50.6 dBm (115 W) and power added efficiency above 42% from 7.7 GHz to 8.7 GHz, while maintain a stable gain above 10.1 dB. This work is relatively competitive comparing with other state-of-the-art works.<bold> </bold>
引用
收藏
页码：463 / 465
页数：3
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