Study on the Effect of Hf Oxide Film Sputtering Condition on Resistive Random Access Memory Properties

被引：0
|
作者：
Azuma, A. [1 ]
Nakajima, R. [1 ]
Yoshida, H. [1 ]
Shimizu, T. [1 ]
Ito, T. [1 ]
Shingubara, S. [1 ]
机构：
[1] Kansai Univ, Grad Sch Engn Sci, Suita, Osaka, Japan
来源：
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied Ti/HfO2/Pt ReRAM device switching characteristics as a function of HfO2 sputtering condition. HfO2 film were formed with DC reactive sputtering with various (O-2/Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained in (O-2/Ar) flow ratio of 2.0. Temperature dependence of resistance showed Frenkel-Pool emission property which might be caused by oxygen vacancies. It is suggested that good switching characteristics is obtained with the HfO2 film of moderate oxygen vacancy concentration.
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页码：322 / 324
页数：3
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