Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN

被引：5
|
作者：
Wang, CX [1 ]
Gao, CX [1 ]
Zhang, TC [1 ]
Liu, HW [1 ]
Li, X [1 ]
Han, YH [1 ]
Luo, JF [1 ]
Shen, CX [1 ]
机构：
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130023, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2002年 / 19卷 / 10期
关键词：
D O I：
10.1088/0256-307X/19/10/334
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50nm)/Mo (100nm)/Au (300nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410degrees C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 1 05, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.
引用
收藏
页码：1513 / 1515
页数：3
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