Empirical Model for the Effective Electron Mobility in Silicon Nanowires

被引：15

作者：

Granzner, Ralf ^{[1
]}

Polyakov, Vladimir M. ^{[2
]}

Schippel, Christian ^{[3
]}

Schwierz, Frank ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Fachgebiet Festkorperelekt, D-98693 Ilmenau, Germany

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[3] Globalfoundries, D-01109 Dresden, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 11期

关键词：

Effective field; empirical model; mobility; MOSFET; phonon scattering; silicon nanowires (SiNWs); surface roughness (SR); PHONON-LIMITED MOBILITY; SCATTERING; SIMULATION; ROUGHNESS; MOSFETS; SI; TRANSPORT; ENHANCEMENT; TRANSISTORS;

D O I：

10.1109/TED.2014.2354254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical simulations of electron transport in SiNWs with different cross sections. Both phonon scattering and surface roughness scattering as well as the impact of the effective vertical field are considered. A comparison with a variety of experimental mobility data from the literature shows that the model can be treated as a reference for benchmarking different NW technologies. The effective field dependence is modeled by a simple expression making our mobility model very efficient for the use in numerical device simulators or in analytical MOSFET models.

引用

页码：3601 / 3607

页数：7

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