Light extraction efficiency analysis of fluorescent OLEDs device

被引:12
|
作者
Sharma, Arvind [1 ]
Das, T. D. [1 ]
机构
[1] Natl Inst Technol, Dept Basic & Appl Sci, Yupia 791112, Arunachal Prade, India
关键词
OCE; Radiant intensity; EL (electroluminance); EMITTING-DIODES; SIMULATION; ELECTROLUMINESCENCE; EMISSION;
D O I
10.1007/s11082-020-02707-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Computation simulation study has been performed to demonstrate the fluorescent properties of the organic light-emitting diode (OLED) device structure. The critical angle is defined at emission wavelength 500 nm for the crown glass-air boundary with the radiant intensities of the s- and p-polarized light increased significantly at the critical angle range of about +/- 40 degrees or about +/- 20 degrees, respectively. Effects of dipole orientation and intrinsic radiative quantum efficiency on optical emission are studied as a function of ETL-TPBi thickness for isotropic, TM, and TE mode optical channels, respectively, in air and glass medium. The device outcoupled efficiency is more sensitive for TM mode than others in the air medium. Finally, the real part of impedance (Z(R)) of the OLED device is defined as a function of frequency for various bias voltages.
引用
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页数:11
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