Exploring the infrared-sensing properties of polymorphous silicon-germanium (pm-SixGey:H) thin films

被引:7
|
作者
Moreno, M. [1 ]
Torres, A. [1 ]
Calleja, C. [1 ]
Ambrosio, R. [2 ]
Rosales, P. [1 ]
Kosarev, A. [1 ]
Jimenez, R. [1 ]
机构
[1] INAOE, Puebla 72840, Mexico
[2] Ciudad Juarez Univ UACJ, Technol & Engn Inst, Chihuahua 32310, Mexico
关键词
MICRO-BOLOMETERS; SOLAR-CELLS; DEPOSITION; DETECTORS; PLASMA;
D O I
10.1139/cjp-2013-0545
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work we have performed an exploratory study of the infrared (IR) sensing properties of polymorphous silicon-germanium (pm-SixGey:H) thin films. Our objective was to study the characteristics that are important parameters for infrared detection, as activation energy (E-a), thermal coefficient of resistance (TCR), room temperature conductivity (sigma(RT)), and responsivity to IR radiation. After characterization, our results demonstrated that pm-SiGe:H films have advantages over a-Si:H, B, pm-Si:H, and pm-Ge:H, because of the possibility to tailor its properties as sigma(RT), E-a, and TCR, and moreover, the possibility to adjust those values for specific applications.
引用
收藏
页码:565 / 569
页数:5
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