Selenium Treatment on the Polycrystalline CuIn1-xGaxSe2 Thin Films Sputtered from a Quaternary Target

被引:0
|
作者
Chang, Chuan [1 ]
Hsu, Chia-Hao [1 ]
Ho, Wei-Hao [1 ]
Wei, Shih-Yuan [1 ]
Su, Yue-Shun [1 ]
Lai, Chih-Huang [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
anionic defect; current-blocking; current-voltage-temperature measurement; quaternary target; recombination; selenium treatment;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this work, selenium treatment at 250-350 degrees C on the polycrystalline CuIn1-xGaxSe2 (CIGS) thin films sputtered from a quaternary target has been investigated in order to passivate anionic defects which induce the current blocking behavior and lowering open circuit voltage. The CIGS thin films were selenized in a closed-space graphite container. The result of selenization was characterized by Raman spectroscopy, EQE and the current-voltage-temperature measurement. After selenization at 350 degrees C, the current-blocking behavior is inhibited and Voc increases from 310mV to 640mV. Until now, the efficiency near 9% can be obtained by an optimized selenization process.
引用
收藏
页码:362 / 364
页数:3
相关论文
共 50 条
  • [1] Structural and optical properties of CuIn1-xGaxSe2 thin films
    Hadia, N. M. A.
    Wakkad, M. M.
    Shokr, E. Kh
    Taya, Y.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2020, 22 (1-2): : 42 - 53
  • [2] Lattice parameters and optical absorption of CuIn1-xGaxSe2 thin films
    Al-Bassam, AAI
    CANADIAN JOURNAL OF PHYSICS, 1999, 77 (07) : 515 - 520
  • [3] Optical functions of thin-film polycrystalline chalcopyrite CuIn1-xGaxSe2
    Han, SH
    Levi, DH
    Althani, HA
    Hasoon, FS
    Bhattacharya, RN
    Hermann, AM
    COMPOUND SEMICONDUCTOR PHOTOVOLTAICS, 2003, 763 : 47 - 52
  • [4] Preparation of CuIn1-xGaxSe2 thin films by sputtering and selenization process
    Song, HK
    Kim, SG
    Kim, HJ
    Kim, SK
    Kang, KW
    Lee, JC
    Yoon, KH
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (1-2) : 145 - 153
  • [5] Influence of sputtering power on composition, structure and electrical properties of RF sputtered CuIn1-xGaxSe2 thin films
    Yu, Zhou
    Yan, Chuanpeng
    Huang, Tao
    Huang, Wen
    Yan, Yong
    Zhang, Yanxia
    Liu, Lian
    Zhang, Yong
    Zhao, Yong
    APPLIED SURFACE SCIENCE, 2012, 258 (13) : 5222 - 5229
  • [6] The Effect of Na Ion Implantation on the Polycrystalline CuIn1-xGaxSe2
    Wu, Wan-Yao
    Chen, Chia-Hsiang
    Hsu, Chia-Hao
    Wei, Shih-Yuan
    Chen, Chien-Hsu
    Wu, Yun-Chung
    Hong, Tian-Jue
    Niu, Huan
    Lai, Chih-Huang
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012,
  • [7] Hole drift mobility measurements in polycrystalline CuIn1-xGaxSe2
    Dinca, S. A.
    Schiff, E. A.
    Egaas, B.
    Noufi, R.
    Young, D. L.
    Shafarman, W. N.
    PHYSICAL REVIEW B, 2009, 80 (23)
  • [8] Influence of annealing temperature on electric properties of CuIn1-xGaxSe2 thin films
    Ouyang, Liangqi
    Zhao, Ming
    Zhuang, Daming
    Sun, Rujun
    Guo, Li
    Li, Xiaolong
    Cao, Mingjie
    Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research, 2014, 28 (10): : 745 - 750
  • [9] CuIn1-xGaxSe2 Thin Films Prepared by Co-evaporation Technique
    Wu, Ya-Fen
    Lee, Jiunn-Chyi
    SOLAR ENERGY MATERIALS AND ENERGY ENGINEERING, 2014, 827 : 12 - +
  • [10] PROPERTIES OF CUIN1-XGAXSE2
    CHU, JW
    DONOHOO, AJ
    HANEMAN, D
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1992, 25 (1-2) : 87 - 92