Blade Coating Aligned, High-Performance, Semiconducting-Polymer Transistors

被引:61
|
作者
Wu, Dawei [1 ]
Kaplan, Maria [1 ]
Ro, Hyun Wook [1 ]
Engmann, Sebastian [1 ]
Fischer, Daniel A. [2 ]
DeLongchamp, Dean M. [1 ]
Richter, Lee J. [1 ]
Gann, Eliot [3 ,4 ]
Thomsen, Lars [4 ]
McNeill, Christopher R. [3 ]
Zhang, Xinran [5 ]
机构
[1] NIST, Mat Sci & Engn Div, 100 Bur Dr, Gaithersburg, MD 20899 USA
[2] NIST, Mat Measurement Sci Div, 100 Bur Dr, Gaithersburg, MD 20899 USA
[3] Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia
[4] Australian Synchrotron, 800 Blackburn Rd, Clayton, Vic 3168, Australia
[5] Georgetown Univ, Dept Phys, Washington, DC 20057 USA
基金
澳大利亚研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT ANISOTROPY; POLYMER/FULLERENE BLEND FILMS; HIGH-MOBILITY; MOLECULAR-ORIENTATION; NEXAFS SPECTROSCOPY; THIN-FILMS; LIQUID; ALIGNMENT; ORDER;
D O I
10.1021/acs.chemmater.7b04835
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent demonstration of mobilities in excess of 10 cm(2) V-1 s(-1) have energized research in solution deposition of polymers for thin film transistor applications. Due to the lamella motif of most soluble, semiconducting polymers, the local mobility is intrinsically anisotropic. Therefore, fabrication of aligned films is of interest for optimization of device performance. Many techniques have been developed to control film alignment, including solution deposition via directed flows and deposition on topologically structured substrates. We report device and detailed structural analysis (ultraviolet-visible absorption, IR absorption, near-edge X-ray absorption (NEXAFS), grazing incidence X-ray diffraction, and atomic force microscopy) results from blade coating two high performing semiconducting polymers on unpatterned and nanostructured substrates. Blade coating exhibits two distinct operational regimes: the Landau-Levich or horizontal dip coating regime and the evaporative regime. We find that in the evaporative deposition regime, aligned films are produced on unpatterned substrates with the polymer chain director perpendicular to the coating direction. Both NEXAFS and device measurements indicate the coating induced orientation is nucleated at the air interface. Nanostructured substrates produce anisotropic bottom contact devices with the polymer chain at the buried interface oriented along the direction of the substrate grooves, independent of coating regime and coating direction. Real time studies of film drying establish that alignment occurs at extremely high polymer volume-fraction conditions, suggesting mediation via a lyotropic phase. In all cases the final films appear to exhibit high degrees of crystalline order. The independent control of alignment at the air and substrate interfaces via coating conditions and substrate treatment, respectively, enable detailed assessment of structure function relationships that suggest the improved performance of the nanostructure aligned films arise from alignment of the less ordered material in the crystallite interphase regions.
引用
收藏
页码:1924 / 1936
页数:13
相关论文
共 50 条
  • [1] Noncovalent semiconducting polymer monolayers for high-performance field-effect transistors
    Li, Mengmeng
    Wang, Jiawei
    Xu, Wanzhen
    Li, Ling
    Pisula, Wojciech
    Janssen, Rene A. J.
    Liu, Ming
    PROGRESS IN POLYMER SCIENCE, 2021, 117
  • [2] Highly aligned conjugated polymer films prepared by rotation coating for high-performance organic field-effect transistors
    Luu Van Tho
    Park, Won-Tae
    Choi, Eun-Young
    Noh, Yong-Young
    APPLIED PHYSICS LETTERS, 2017, 110 (16)
  • [3] Self-aligned printing of high-performance polymer thin-film transistors
    Noh, Yong-Young
    Zhao, Ni
    Cheng, Xiaoyang
    Sirringhaus, Henning
    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 37 - +
  • [4] Aligned Tin Oxide Nanonets for High-Performance Transistors
    Sun, Cheng
    Mathews, Nripan
    Zheng, Minrui
    Sow, Chorng Haur
    Wong, Lydia Helena
    Mhaisalkar, Subodh G.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (02): : 1331 - 1336
  • [5] Colloids of semiconducting polymers for high-performance, environment-friendly polymer field effect transistors
    Cho, Jangwhan
    Cheon, Kwang Hee
    Park, Kwang Hun
    Kwon, Soon-Ki
    Kim, Yun-Hi
    Chung, Dae Sung
    ORGANIC ELECTRONICS, 2015, 24 : 160 - 164
  • [6] Porous Semiconducting Polymers Enable High-Performance Electrochemical Transistors
    Huang, Lizhen
    Wang, Zhi
    Chen, Jianhua
    Wang, Binghao
    Chen, Yao
    Huang, Wei
    Chi, Lifeng
    Marks, Tobin J.
    Facchetti, Antonio
    ADVANCED MATERIALS, 2021, 33 (14)
  • [7] Thiophene-Thiazole-Based Semiconducting Copolymers for High-Performance Polymer Field-Effect Transistors
    Chung, Jong Won
    Park, Won-Tae
    Park, Jeong-Il
    Yun, Youngjun
    Gu, Xiaodan
    Lee, Jiyoul
    Noh, Yong-Young
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (44) : 38728 - 38736
  • [8] Semiconducting Polymer Nanowires with Highly Aligned Molecules for Polymer Field Effect Transistors
    Park, Keon Joo
    Kim, Chae Won
    Sung, Min Jae
    Lee, Jiyoul
    Chun, Young Tea
    ELECTRONICS, 2022, 11 (04)
  • [9] Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors
    Zhu, Huihui
    Liu, Ao
    Luque, Hector Lopez
    Sun, Huabin
    Ji, Dongseob
    Noh, Yong-Young
    ACS NANO, 2019, 13 (04) : 3971 - 3981
  • [10] Indacenodithiophene Semiconducting Polymers for High-Performance, Air-Stable Transistors
    Zhang, Weimin
    Smith, Jeremy
    Watkins, Scott E.
    Gysel, Roman
    McGehee, Michael
    Salleo, Alberto
    Kirkpatrick, James
    Ashraf, Shahid
    Anthopoulos, Thomas
    Heeney, Martin
    McCulloch, Iain
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (33) : 11437 - 11439