WO3 nanorods prepared by low-temperature seeded growth hydrothermal reaction

被引:25
|
作者
Ng, Chai Yan [1 ]
Razak, Khairunisak Abdul [1 ,2 ]
Lockman, Zainovia [1 ]
机构
[1] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Penang, Malaysia
[2] Univ Sains Malaysia, Inst Res Mol Med INFORMM, NanoBiotechnol Res & Innovat NanoBRI, Usm 11800, Penang, Malaysia
关键词
Tungsten oxide; CTAB; Surfactant; Tungsten foil; Electrochromic; OXIDE THIN-FILMS; ELECTROCHROMIC PROPERTIES; 3; KINDS; TUNGSTEN; ARRAYS; DEPOSITION; SUBSTRATE; NANOPARTICLES;
D O I
10.1016/j.jallcom.2013.11.096
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This work describes the first tungsten oxide (WO3) nanorods hydrothermally grown on W foil. WO3 nanorods were successfully grown at low hydrothermal temperature of 80 degrees C by seeded growth hydrothermal reaction. The seed layer was prepared by thermally oxidized the W foil at 400 degrees C for 0.5 h. This work discusses the effect of hydrothermal reaction and annealing period on the morphological, structural, and electrochromic properties of WO3 nanorods. Various hydrothermal reaction periods (8-24 h) were studied. Monoclinic WO3 nanorods with 5-10 nm diameter were obtained after hydrothermal reaction for 24 h. These 24 h WO3 nanorods were also annealed at 400 degrees C with varying dwelling periods (0.5-4 h). Electrochromic properties of WO3 nanorods in an acidic electrolyte were analyzed using cyclic voltammetry and UV-vis spectrophotometry. WO3 nanorods annealed at 400 degrees C for 1 h showed the highest charge capacity and the largest optical contrast among the 24 h WO3 films. The sample also showed good cycling stability without significant degradation. Based on the results, the reaction mechanism of WO3 nanorod formation on W foil was proposed. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:585 / 591
页数:7
相关论文
共 50 条
  • [1] WO3 nanorods prepared by low-temperature seeded growth hydrothermal reaction
    Abdul Razak, K. (khairunisak@eng.usm.my), 1600, Elsevier Ltd (588):
  • [2] Low-temperature hydrothermal synthesis of WO3 nanorods and their sensing properties for NO2
    Bai, Shouli
    Zhang, Kewei
    Luo, Ruixian
    Li, Dianqing
    Chen, Aifan
    Liu, Chung Chiun
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (25) : 12643 - 12650
  • [3] Study on Tungsten Oxide (WO3) Nanostructures Formation via Seeded Growth Hydrothermal Reaction
    Makhsin, Siti Rabizah
    Razak, Khairunisak Abdul
    Lockman, Zainovia
    EXPERIMENTAL MECHANICS AND MATERIALS, 2011, 83 : 204 - 209
  • [4] Hydrothermal synthesis and NH3 gas sensing property of WO3 nanorods at low temperature
    Dac Dien Nguyen
    Duc Vuong Dang
    Duc Chien Nguyen
    ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, 2015, 6 (03)
  • [5] Low-temperature photoluminescence of WO3 nanoparticles
    Cho, Hak Dong
    Yoon, Im Taek
    Chung, Kwun Bum
    Kim, Deuk Young
    Kang, Tae Won
    Yuldashev, Sh. U.
    JOURNAL OF LUMINESCENCE, 2018, 195 : 344 - 347
  • [6] The formation of WO3 nanorods using the surfactant-assisted hydrothermal reaction
    Ng, Chai Yan
    Razak, Khairunisak Abdul
    Aziz, Azlan Abdul
    Lockman, Zainovia
    JOURNAL OF EXPERIMENTAL NANOSCIENCE, 2014, 9 (01) : 9 - 16
  • [7] Hydrothermal synthesis of WO3 nanorods: structure, growth and gas sensing properties
    Cao, Shixiu
    Chen, Hui
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 12 (11-12): : 749 - 753
  • [8] Hydrothermal synthesis of WO3 nanorods: Structure, growth and gas sensing properties
    Chen, H.U.I. (18580872389@163.com), 2018, National Institute of Optoelectronics (12): : 11 - 12
  • [9] Effect of hydrothermal duration on synthesis of WO3 nanorods
    Hamid Hassani
    Ehsan Marzbanrad
    Cyrus Zamani
    Babak Raissi
    Journal of Materials Science: Materials in Electronics, 2011, 22 : 1264 - 1268
  • [10] Effect of hydrothermal duration on synthesis of WO3 nanorods
    Hassani, Hamid
    Marzbanrad, Ehsan
    Zamani, Cyrus
    Raissi, Babak
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (09) : 1264 - 1268