Scanning tunneling microscopy study of InP(100)-(2x4): An exception to the dimer model

被引：84

作者：

MacPherson, CD ^{[1
]}

Wolkow, RA ^{[1
]}

Mitchell, CEJ ^{[1
]}

McLean, AB ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT PHYS,KINGSTON,ON K7L 3N6,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.77.691

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first atomic resolution scanning tunneling microscopy images of the InP(100)-(2 x 4) surface. High resolution images were obtained for both occupied and unoccupied states. The x4 periodicity is due to missing rows, and the x2 periodicity to the repetition of what appear to be trimer units. It is demonstrated that the images are inconsistent with dimer-based models proposed for related semiconductor surfaces such as GaAs.

引用

页码：691 / 694

页数：4

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