Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by an in situ method

被引：14
|
作者：
Chromik, S.
Huran, J.
Strbik, V.
Spankova, M.
Vavra, I.
Bohne, W.
Roehrich, J.
Strub, E.
Kovac, P.
Stancek, S.
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[3] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Dept Nucl Phys & Technol, Bratislava 81219, Slovakia
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2006年 / 19卷 / 06期
关键词：
D O I：
10.1088/0953-2048/19/6/027
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of a B - Mg bilayer followed by in situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 degrees C to be reached. Transmission electron microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150 - 200 nm thick films show a maximum zero resistance critical temperature T-C0 above 37 K and a critical current density J(C) similar to 10(6) A cm(-2) at 11 K.
引用
收藏
页码：577 / 580
页数：4
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