Rigorous modeling of high-speed semiconductor devices

被引：0
|
作者：
Palankovski, V [1 ]
Selberherr, S [1 ]
机构：
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
来源：
MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 06期
关键词：
D O I：
10.1016/j.microrel.2004.02.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a review of industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors analyzed by means of numerical simulation. A comparison of device simulators and current transport models is given and critical modeling issues are addressed. Results from two-dimensional hydrodynamic analyses of heterojunction bipolar transistors (HBTs) are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：889 / 897
页数：9
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