6-7 GHz Cryogenic Low-Noise mHEMT-Based Amplifier for Quantum Computing

被引：1
|
作者：
Qu, Shenqi [1 ]
Wang, Xiaochuan [1 ]
Zhang, Cheng [1 ]
Wang, Zili [1 ]
机构：
[1] CETC16, Dept Cryogen Elect Engn, Hefei, Peoples R China
来源：
2019 CROSS STRAIT QUAD-REGIONAL RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSQRWC) | 2019年
关键词：
mHEMT; Cryogenic; LNA; Quantum computing;
D O I：
10.1109/csqrwc.2019.8799182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A C-band cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 70 nm GaAs metamorphic high electron mobility transistor (mHEMT) process for quantum computing. The input impedance of the LNA was transformed to the optimum noise match of the transistor. At ambient temperature 10 K, the minimum noise temperature was 4.5 K at 6.3 GHz and below 5.0 K within the entire 6.0-7.0 GHz band.
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页数：3
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