Growth of CdSe- and CdTe-based nanostructures on silicon

被引：4
|
作者：
Ezhovskii, YK [1 ]
Mikhaevich, DP [1 ]
机构：
[1] Tech Univ, St Petersburg Technol Inst, St Petersburg 190013, Russia
来源：
INORGANIC MATERIALS | 2004年 / 40卷 / 09期
关键词：
Silicon; Inorganic Chemistry; Chemisorption; Silicon Substrate; General Mechanism;
D O I：
10.1023/B:INMA.0000041319.30903.c9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CdSe, CdTe, and CdTe(x)Sel(1-x) nanostructures were grown on silicon substrates with different orientations by atomic layer deposition. The general mechanisms of Cd, Se, and Te chemisorption and nanostructure growth were elucidated, and the conditions for layer-by-layer growth were identified.
引用
收藏
页码：909 / 913
页数：5
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