Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator

被引：42

作者：

Wang, Hailong ^{[1
,2
]}

Finley, Joseph ^{[1
]}

Zhang, Pengxiang ^{[1
]}

Han, Jiahao ^{[1
]}

Hou, Justin T. ^{[1
]}

Liu, Luqiao ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[2] Univ Calif San Diego, Ctr Memory & Recording Res, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW APPLIED | 2019年 / 11卷 / 04期

基金：

美国国家科学基金会;

关键词：

TRANSITION; DYNAMICS;

D O I：

10.1103/PhysRevApplied.11.044070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of antiferromagnetic insulator-mediated spin-orbit-torque switching in Pt/NiO/Co1-xTbx heterostructures. By measuring the current-induced shift in the magnetic hysteresis loops and the second-harmonic anomalous Hall resistance, we quantitatively determine the spin-orbit-torque efficiency in Pt/NiO/Co1-xTbx samples with different NiO thicknesses, uncovering a systematic evolution of the magnetic switching behavior. The measured spin-orbit-torque efficiency is enhanced in the low NiO thickness regime (1-2 nm), highlighting the efficient spin manipulation across a disordered antiferromagnetic insulator.

引用

页数：6

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