Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures

被引：1

作者：

Gurevich, A. S. ^{[1
]}

Kochereshko, V. P. ^{[1
]}

Litvinov, A. N. ^{[1
]}

Platonov, A. V. ^{[1
]}

Zyakin, B. A. ^{[1
]}

Waag, B. A. ^{[2
]}

Landwehr, G. ^{[3
]}

机构：

[1] AF Ioffe Phys Tech Inst, 26 Polytekn Skaya, St Petersburg 194021, Russia

[2] Tech Univ Carolo Wilhelmina Braunschweig, D-38106 Braunschweig, Germany

[3] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

来源：

NANOPHOTONIC MATERIALS III | 2006年 / 6321卷

基金：

俄罗斯基础研究基金会;

关键词：

optical properties of interfaces; wide-gap II-VI based nanostructures;

D O I：

10.1117/12.680052

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present an experimental data, which demonstrate a basically new mechanism of carrier radiative recombination in semiconductor heterostructures - recombination via Tamm-like interface states. Bright line was observed in photoluminescence spectra of periodical ZnSe/BeTe heterostructures at the energies, which correspond to the optical transitions between electron and hole Tamm-like interface states in studied heterosystem. Photoluminescence via Tamm-like interface states was observed for wide range excitation densities in the temperature range from 15K to 160K. It was found that for short-period ZnSe/BeTe heterostructures at low temperatures and at low excitation densities photoluminescence via Tamm-like interface states is much stronger than conventional interband radiative recombination.

引用

页数：11

共 4 条

[1] Tamm interface states in ZnSe/BeTe periodic heterostructures
A. S. Gurevich
V. P. Kochereshko
A. V. Platonov
B. A. Zyakin
A. Waag
G. Landwehr
Physics of the Solid State, 2005, 47 : 1964 - 1971
[2] Tamm interface states in ZnSe/BeTe periodic heterostructures
Gurevich, AS
Kochereshko, VP
Platonov, AV
Zyakin, BA
Waag, A
Landwehr, G
PHYSICS OF THE SOLID STATE, 2005, 47 (10) : 1964 - 1971
[3] Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation
A. A. Maksimov
S. V. Zaitsev
E. V. Filatov
A. V. Larionov
I. I. Tartakovskii
D. R. Yakovlev
A. Waag
JETP Letters, 2008, 88 : 511 - 514
[4] Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation
Maksimov, A. A.
Zaitsev, S. V.
Filatov, E. V.
Larionov, A. V.
Tartakovskii, I. I.
Yakovlev, D. R.
Waag, A.
JETP LETTERS, 2008, 88 (08) : 511 - 514

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