Molecular dynamics simulations of low energy atomic collisions between an atom and a substrate: Effect of incident angle and energy

被引:7
|
作者
Ohashi, T [1 ]
Miyake, K [1 ]
Ohashi, K [1 ]
机构
[1] HITACHI LTD,POWER & IND SYST R&D DIV,HITACHI,IBARAKI 31912,JAPAN
关键词
D O I
10.1016/S0168-583X(97)80010-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Atomic collisions during the ion beam deposition of Al thin films are simulated by a molecular dynamics method, assuming that the incident atoms are neutralized, The kinetic energies of the incident atoms range from 10 to 50 eV and the angles of incident to Al substrate are controlled between pi/6 and pi/3. The simulation results show reflection or rapid trapping of the incident atoms as well as a surface migration for a longer distance. As a response to the collision, atoms in the substrate show highly directional or much more diffused propagation of thermal vibration, depending on the incident angle or timing of the collision.
引用
收藏
页码:40 / 43
页数:4
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