Edge of the two-dimensional electron gas in a gated heterostructure

被引：1
|
作者：
Larkin, IA
Davies, JH
机构：
[1] Dept. of Electronics and Elec. Eng., Glasgow University
来源：
SURFACE SCIENCE | 1996年 / 361卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
electrical transport; electron density; excitation spectra calculations; gallium arsenide; heterojunctions; low index single crystal surfaces; semiconductor-semiconductor heterostructures; surface electronic phenomena;
D O I：
10.1016/0039-6028(96)00459-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We describe a quantitative electrostatic theory of a two-dimensional electron gas (2DEG) confined by a semi-infinite gate. It includes the finite depth of the 2DEG below the surface of the heterostructure, which enables us to treat the whole range of gate voltages. Two models are used for the boundary condition on the free surface, with either pinned potential or frozen charge. Our results predict the position and width of the strips of incompressible liquid in the quantum Hall regime, and are in good agreement with recent experiments.
引用
收藏
页码：517 / 520
页数：4
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