Photosensitive anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions

被引：6
|
作者：
Kudrynskyi, Z. R. [1 ]
Kovalyuk, Z. D. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Frantsevich Inst Mat Sci Problems, UA-58001 Chernovtsy, Ukraine
来源：
TECHNICAL PHYSICS | 2014年 / 59卷 / 08期
关键词：
ELECTRICAL-PROPERTIES; NANOSTRUCTURES; NANOSHEETS; CRYSTALS;
D O I：
10.1134/S106378421408012X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions are obtained for the first time. They are grown on layered crystalline GaSe and InSe substrates by annealing in Zn vapor. It is found that these heterojunctions are sensitive to light in the near-infrared and visible spectral ranges.
引用
收藏
页码：1205 / 1208
页数：4
相关论文
共 50 条
  • [1] Photosensitive anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions
    Z. R. Kudrynskyi
    Z. D. Kovalyuk
    Technical Physics, 2014, 59 : 1205 - 1208
  • [2] Electrical Properties of Anisotype ZnO:Al/n-ZnSe/p-CdTe Heterostructures
    Maistruk, Eduard V.
    Orletskyi, Ivan G.
    Ilashchuk, Maria I.
    Koziarskyi, Ivan P.
    Koziarskyi, Dmytro P.
    ACS OMEGA, 2023, 8 (37): : 34146 - 34151
  • [3] THERMODYNAMICS OF THE PHOTOCORROSION OF n-ZnSe AND p-ZnTe
    Bozzini, Benedetto
    Maffi, Silvia
    D'Urzo, Lucia
    Bicelli, Luisa Peraldo
    CORROSION REVIEWS, 2009, 27 (1-2) : 83 - 115
  • [4] Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions
    Shashidhara Acharya
    Kasturi V. Bangera
    G. K. Shivakumar
    Applied Nanoscience, 2015, 5 : 1003 - 1007
  • [5] Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions
    Acharya, Shashidhara
    Bangera, Kasturi V.
    Shivakumar, G. K.
    APPLIED NANOSCIENCE, 2015, 5 (08) : 1003 - 1007
  • [6] CAPACITANCE VOLTAGE CHARACTERIZATION OF N-ZNSE/N-GAAS HETEROJUNCTIONS
    MATSUMOTO, T
    KOKUBO, N
    KAWAKAMI, K
    KATO, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 578 - 582
  • [7] n-ZnSe/p-GaAs heterojunction solar cells
    Blieske, U
    Kampschulte, T
    Bauknecht, A
    Saad, M
    Sollner, J
    Krost, A
    Schatke, K
    Lux-Steiner, MC
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 939 - 942
  • [8] DOPING CHARACTERISTICS OF N-DOPED P-ZNSE AND CL-DOPED N-ZNSE
    YAO, T
    ZHU, Z
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 187 (02): : 387 - 392
  • [9] Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions
    Indudhar Panduranga Vali
    Rashmitha Keshav
    M. Rajeshwari
    K. S. Vaishnavi
    M. G. Mahesha
    Pramoda Kumara Shetty
    Silicon, 2022, 14 : 3785 - 3794
  • [10] INDIUM OHMIC CONTACTS TO N-ZNSE
    WANG, YX
    HOLLOWAY, PH
    VACUUM, 1992, 43 (11) : 1149 - 1151
12345