Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

被引：0
|
作者：
Sun Jing [1 ]
Wang Hong [1 ]
Wang Zhan [1 ]
Wu Shi-Wei [1 ]
Ma Xiao-Hua [1 ]
机构：
[1] Xidian Univ, Key Lab Wide Band Gap Semicond Technol, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 10期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; PERFORMANCE; RESISTANCE; ELECTRONICS; OPERATION; MOBILITY;
D O I：
10.1088/0256-307X/32/10/107304
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The contact-size-dependent characteristic of cutoff frequency f(T) in bottom-contact organic thin film transistors (OTFTs) is studied. The effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length (source and drain electrodes' length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm. With the help of the contact length related contact resistance, contact-size-dependent f(T) of bottom-contact OTFTs is studied and it is found that f(T) increases with the decrease of the contact length in bottom-contact OTFTs.
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页数：3
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