Experimental Investigation on Wideband Intermodulation Distortion Compensation Characteristics of 3.5-GHz band 140-W Class Feed-Forward Power Amplifier Employing GaN HEMTs

被引：0

作者：

Suzuki, Yasunori ^{[1
]}

Ohkawara, Junya ^{[1
]}

Narahashi, Shoichi ^{[1
]}

机构：

[1] NTT DOCOMO INC, Res Labs, 3-6 Hikari No Oka, Yokosuka, Kanagawa 2398536, Japan

来源：

2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年

关键词：

feed-forward power amplifiers; wideband non-linear distortion compensation; base stations; GaN HEMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an experimental investigation on the wideband intermodulation distortion compensation characteristics of a 3.5-GHz feed-forward power amplifier for mobile base stations. The fabricated 3.5-GHz band 140-W class feed-forward power amplifier employing gallium nitride high electron mobility transistors (GaN HEMTs) achieves the intermodulation distortion compensation bandwidth of 160 MHz at the output power of 12.5 W and the adjacent channel leakage power ratio of-45 dBc using a long term evolution test signal with the bandwidth of 5 MHz. The results confirm that the feed-forward power amplifier with GaN HEMTs is a worthwhile linearizer because it offers wideband intermodulation distortion compensation performance to 3.5GHz band mobile base stations.

引用

页码：1 / 4

页数：4