Carrier Systems for Collective Die-to-Wafer Bonding

被引:10
|
作者
Kennes, Koen [1 ]
Phommahaxay, Alain [1 ]
Guerrero, Alice [2 ]
Suhard, Samuel [1 ]
Bex, Pieter [1 ]
Brems, Steven [1 ]
Liu, Xiao [2 ]
Tussing, Sebastian [3 ]
Beyer, Gerald [1 ]
Beyne, Eric [1 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Brewer Sci Inc, 2401 Brewer Dr, Rolla, MO 65401 USA
[3] SUSS MicroTec Lithog GmbH, Ferdinand von Steinbeis Ring 10, D-75447 Sternenfels, Germany
关键词
Heterogeneous integration; wafer bonder; dielectric bonding; hybrid bonding; die-to-waftr bonding; temporary bonding material; laser release material; laser debonding; collective hybrid bonding;
D O I
10.1109/ECTC51906.2022.00324
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Several alternative carrier systems for collective die-to-wafer transfer, using the laser debonding technique, are evaluated. The principles of laser debonding are explained and applied to thin die transfer. A so called 'acoustic' layer needs to be present to avoid damage to the dies during the laser ablation process. The benefits and disadvantages of applying this layer to the glass carrier system rather than to the dies prior to singulation are explained. Three alternative carrier systems, based on BrewerBOND (R) C1301-50 material and BrewerBOND (R) T1107 release material, are designed and evaluated for die placement, protective layer strip, collective bonding and finally laser debonding. A quantitative analysis and comparison with a reference system containing the release layer and acoustic layer on the die prior to singulation is presented.
引用
收藏
页码:2058 / 2063
页数:6
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