Design of220GHz power amplifier based on90nm InP HEMT process br

被引：2

作者：

Chen, Yan ^{[1
]}

Meng, Fan-Zhong ^{[1
]}

Fang, Yuan ^{[1
]}

Zhang, Ao ^{[2
]}

Gao, Jian-Jun ^{[2
]}

机构：

[1] CETC, Res Inst 13, Shijiazhuang 050051, Peoples R China

[2] East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2022年 / 41卷 / 06期

基金：

中国国家自然科学基金;

关键词：

InP high electron mobility transistor?InP HEMT); power amplifier?PA); terahertz integrated circuit?TMIC);

D O I：

10.11972/j.issn.1001-9014.2022.06.013

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Based on the90nm InP HEMT process?a220GHz power amplifier terahertz integrated circuit design(TMIC?is designed.The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesisof two-way five stage common-source amplifiers.The on-wafer measurement results show that the average small signalgain of the power amplifier is18dB.The power test results show that the saturated output power of the power amplifieris better than15.8mW from210GHz to230GHz?with a maximum output power of20.9mW at223GHz.The sizeof the TMIC chip is2.18mmx2.40mm

引用

页码：1037 / 1041

页数：5

共 10 条

[1] High Efficiency Ka-Band Gallium Nitride Power Amplifier MMICs
Campbell, Charles F.
Liu, Yueying
Kao, Ming-Yih
Nayak, Sabyasachi
[J]. 2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013), 2013,
[2] A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology
Campos-Roca, Yolanda
Tessmann, Axel
Amado-Rey, Belen
Wagner, Sandrine
Massler, Hermann
Hurm, Volker
Leuther, Arnulf
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2014, 24 (11) : 787 - 789
[3] W波段InP HEMT MMIC功率放大器
冯威
刘如青
胡志富
魏碧华
[J]. 半导体技术, 2016, 41 (04) : 267 - 270+275
[4] Gritters Darin, 2015, 2015 IEEE MTT-S International Microwave Symposium (IMS2015), P1, DOI 10.1109/MWSYM.2015.7166808
[5] A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology
Kallfass, I.
Pahl, P.
Massler, H.
Leuther, A.
Tessmann, A.
Koch, S.
Zwick, T.
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (06) : 410 - 412
[6] Laengst J, 2013, IEEE INT C INFRARED, P1
[7] Matsumura H, 2013, INT C INDIUM PHOSPHI, P1
[8] 220-GHz Solid-State Power Amplifier Modules
Radisic, Vesna
Leong, Kevin M. K. H.
Sarkozy, Stephen
Mei, Xiaobing
Yoshida, Wayne
Liu, Po-Hsin
Deal, William R.
Lai, Richard
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (10) : 2291 - 2297
[9] Radisic V, 2010, IEEE MTT S INT MICR, P45, DOI 10.1109/MWSYM.2010.5515248
[10] Reed T B, 2013, IEEE COMPOUND SEMICO, P1

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