AlN thin films grown by ion-beam-enhanced deposition and its application to SOI materials

被引：13
|
作者：
Men, CL [1 ]
Xu, Z
An, ZH
Xie, XY
Zhang, M
Lin, CL
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Tongji Univ, Sch Mat Sci & Engn, Inst Microelect Mat, Shanghai 200092, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2002年 / 324卷 / 1-4期
关键词：
AlN films; ion-beam-enhanced deposition; SOI; the Smart-Cut process;
D O I：
10.1016/S0921-4526(02)01318-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Large area aluminium nitride (AlN) films were synthesized by ion-beam-enhanced deposition (IBED) method. Characterizations of the films revealed that the quality of the films strongly depends on the evaporation rate of Al. The best quality was obtained with the evaporation rate of Al at 0.5 Angstrom/s, and the film has excellent dielectric property and a smoother surface with roughness RMS values of 0.13 nm, and could be bonded directly with a hydrogen-implanted wafer at room temperature. Consequently, a novel silicon-on-insulator structure with AlN as insulating layer has been formed by the Smart-Cut process. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：229 / 234
页数：6
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