Heterogeneously integrated sub-40nm low-power epi-like Ge/Si monolithic 3D-IC with stacked SiGeC ambient light harvester

被引：0

作者：

Shen, Chang-Hong ^{[1
]}

Shieh, Jia-Min ^{[1
,2
]}

Huang, Wen-Hsien ^{[1
]}

Wu, Tsung-Ta ^{[1
]}

Chen, Chien-Fu ^{[3
]}

Kao, Ming-Hsuan ^{[4
]}

Yang, Chih-Chao ^{[1
]}

Lin, Chein-Din ^{[1
]}

Wang, Hsing-Hsiang ^{[1
]}

Hsieh, Tung-Yang ^{[1
]}

Chen, Bo-Yuan ^{[1
]}

Huang, Guo-Wei ^{[1
]}

Chang, Meng-Fan ^{[3
]}

Yang, Fu-Liang ^{[5
]}

机构：

[1] Natl Nano Device Labs, 26,Prosper Rd 1, Hsinchu 30078, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[5] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

For the first time, we report heterogeneously integrated sub-40nm epi-like Ge/Si monolithic 3D-IC with low-power logic/NVM circuits and efficient photovoltaic energy harvester. Threshold voltage engineering and driving current boosting technologies enable stackable Ge/Si UTB (< 15nm) MOSFETs, CMOS inverter and SRAM (SNM=270mV@0.7V) achieve low operation voltage. Stackable 1-T NVM with high speed (100ns) and low driving-voltage operation provide power-off storage while SRAM serve as power-on working memory. 100% aperture ratio SiGeC ambient light energy harvester with maximum output power of 7mW/cm(2) layered on the monolithic 3D-IC chip envisions a self-powered monolithic 3D-IC technology for advanced low-power wire-less sensor networks, wearable devices, and devices for Internet of Things.

引用

页数：4