Growth behavior of epitaxial semiconductor axial nanowire heterostructures

被引：0

作者：

Zou, J. ^{[1
,2
]}

Paladugu, M. ^{[1
]}

Guo, Y. N. ^{[1
]}

Zhang, X. ^{[1
]}

Auchterlonie, G. J. ^{[2
]}

Joyce, H. J. ^{[3
]}

Gao, Q. ^{[3
]}

Tan, H. H. ^{[3
]}

Jagadish, C. ^{[3
]}

Kim, Y. ^{[4
]}

机构：

[1] Univ Queensland, Sch Engn, St Lucia, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanalysis, St Lucia, Qld 4072, Australia

[3] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[4] Dong A Univ, Dept Phys, Busan 604-714, South Korea

来源：

COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2008年

基金：

澳大利亚研究理事会;

关键词：

nanowires; Crystal Growth; vapor-liquid-solid; heterostructues; epitaxy; nucleation and growth;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.

引用

页码：71 / +

页数：2

共 50 条

[1] Monolithic Axial and Radial Metal-Semiconductor Nanowire Heterostructures
Sistani, M.
Luong, M. A.
den Hertog, M. I.
Robin, E.
Spies, M.
Fernandez, B.
Yao, J.
Bertagnolli, E.
Lugstein, A.
NANO LETTERS, 2018, 18 (12) : 7692 - 7697
[2] Semiconductor nanowire heterostructures
Lauhon, LJ
Gudiksen, MS
Lieber, CM
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2004, 362 (1819): : 1247 - 1260
[3] The Novel Semiconductor Nanowire Heterostructures
JQHu
YBando
JHZhan
DGolberg
复旦学报(自然科学版), 2007, (05) : 712 - 713
[4] Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications
Muskens, Otto L.
Diedenhofen, Silke L.
van Weert, Maarten H. M.
Borgstroem, Magnus T.
Bakkers, Erik P. A. M.
Rivas, Jaime Gomez
ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (07) : 1039 - 1046
[5] Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures
Szot, M.
Kowalczyk, L.
Smajek, E.
Domukhovski, V.
Domagala, T.
Lusakowska, E.
Taliashvili, B.
Dziawa, P.
Knoff, W.
Wiater, M.
Wojtowicz, T.
Story, T.
ACTA PHYSICA POLONICA A, 2008, 114 (05) : 1391 - 1396
[6] Molecular beam epitaxial growth of semiconductor heterostructures for THz electronics
Ustinov, Victor M.
3RD INTERNATIONAL CONFERENCE TERAHERTZ AND MICROWAVE RADIATION: GENERATION, DETECTION AND APPLICATIONS (TERA-2018), 2018, 195
[7] Epitaxial Nanosheet-Nanowire Heterostructures
Li, Chun
Yu, Yifei
Chi, Miaofang
Cao, Linyou
NANO LETTERS, 2013, 13 (03) : 948 - 953
[8] Self-catalyzed growth of InP/InSb axial nanowire heterostructures
Pozuelo, Marta
Zhou, Hailong
Lin, Stanley
Lipman, Scott A.
Goorsky, Mark S.
Hicks, Robert F.
Kodambaka, Suneel
JOURNAL OF CRYSTAL GROWTH, 2011, 329 (01) : 6 - 11
[9] Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Paladugu, Mohanchand
Zou, Jin
Guo, Ya-Nan
Auchterlonie, Graeme J.
Joyce, Hannah J.
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Kim, Yong
SMALL, 2007, 3 (11) : 1873 - 1877
[10] Atomic Scale Strain Relaxation in Axial Semiconductor III-V Nanowire Heterostructures
de la Mata, Maria
Magen, Cesar
Caroff, Philippe
Arbiol, Jordi
NANO LETTERS, 2014, 14 (11) : 6614 - 6620

← 1 2 3 4 5 →