An Investigation of the Gas Phase and Surface Chemistry Active During the PECVD of nc-Silicon: a Detailed Model of the Gas Phase and Surface Chemistry

被引：1

作者：

Cavallotti, C. ^{[1
]}

Rondanini, M. ^{[1
]}

Moiseev, T. ^{[2
]}

Chrastina, D. ^{[2
]}

Isella, G. ^{[2
]}

机构：

[1] Politecn Milan, Dipartimento Chim Mat & Ingn Chim, Via Mancinelli 7, I-20131 Milan, Italy

[2] Politecn Milan, Dipartimento Fis, L NESS Lab, I-22100 Milan, Italy

来源：

EUROCVD 17 / CVD 17 | 2009年 / 25卷 / 08期

关键词：

CHEMICAL-VAPOR-DEPOSITION; PLASMA CHEMISTRY; SILANE PLASMA; RF PLASMA; SI; REACTOR; SITES; FILMS;

D O I：

10.1149/1.3207581

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work we present a detailed model that is able to describe the elementary chemistry active in the gas phase and on the surface during the plasma deposition of nc-Silicon films. The model is validated by comparison with mass spectrometry data measured in situ in a low energy PECVD plasma reactor. It was found that the main growth precursors are SiH3, SiH2 and SiH radicals, with the more dehydrogenated radicals becoming dominant at high hydrogen dilution, and that during the film growth more than 90% of the surface is covered by hydrogen.

引用

页码：107 / 114

页数：8

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