Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

被引：8

作者：

Schaefer, A. ^{[1
,2
]}

Besmehn, A. ^{[3
]}

Luysberg, M. ^{[4
,5
]}

Winden, A. ^{[1
,2
]}

Stoica, T. ^{[1
,2
]}

Schnee, M. ^{[2
,6
]}

Zander, W. ^{[1
,2
]}

Niu, G. ^{[7
]}

Schroeder, T. ^{[7
]}

Mantl, S. ^{[1
,2
]}

Hardtdegen, H. ^{[1
,2
]}

Mikulics, M. ^{[1
,2
]}

Schubert, J. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany

[2] JARA, Aachen, Germany

[3] Forschungszentrum Julich, Cent Inst Engn Elect & Analyt ZEA 3, D-52425 Julich, Germany

[4] Forschungszentrum Julich, Ernst Ruska Ctr, D-52425 Julich, Germany

[5] Forschungszentrum Julich, Peter Grunberg Inst 5, D-52425 Julich, Germany

[6] Forschungszentrum Julich, Peter Grunberg Inst 6, D-52425 Julich, Germany

[7] IHP, D-15236 Frankfurt, Oder, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 07期

关键词：

GaN; high-k; pulsed laser deposition; rare earth scandates; GdScO3; GROWTH;

D O I：

10.1088/0268-1242/29/7/075005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GdScO3 was deposited by pulsed laser deposition on two different templates suitable for III-N growth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beam epitaxial Y2O3 on Si (1 1 1). The structure and crystallinity of the layers were determined as well as the band gap and permittivity of the material. It was found that GdScO3 grows epitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic or amorphous phases. A band gap and permittivity kappa of 5.2 eV and 24 were found, respectively, making GdScO3 a promising epitaxial gate dielectric for III-N transistor applications.

引用

页数：5

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