Low temperature deposition with inductively coupled plasma

被引：0

作者：

Lee, Seung-Hoon ^{[1
]}

Jung, Dong-Ha ^{[1
]}

Jung, Seung-Jae ^{[1
]}

Hong, Seung-Chan ^{[1
]}

Lee, Jung-Joong ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH | 2006年 / 97卷 / 04期

关键词：

inductively coupled plasma; TiB2; TiN; TiO2; SnO2;

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The processing temperature of chemical and physical vapor deposition could be successfully lowered by applying inductively coupled plasma without deteriorating the film quality. Despite the low process temperature, the deposition rate was higher than that observed in conventional deposition processes, and the impurity content could be kept low. Some examples of inductively coupled plasma applications e. g. TiB2, TiN, TiO2, and SnO2 films are shown.

引用

页码：475 / 479

页数：5

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School of Material Science and Engineering, Seoul National University, Seoul
151-742, Korea, Republic of
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