Characteristics of GaN-based laser diodes for post-DVD applications

被引：93

作者：

Nam, OH ^{[1
]}

Ha, KH ^{[1
]}

Kwak, JS ^{[1
]}

Lee, SN ^{[1
]}

Choi, KK ^{[1
]}

Chang, TH ^{[1
]}

Chae, SH ^{[1
]}

Lee, WS ^{[1
]}

Sung, YJ ^{[1
]}

Paek, HS ^{[1
]}

Chae, JH ^{[1
]}

Sakong, T ^{[1
]}

Son, JK ^{[1
]}

Ryu, HY ^{[1
]}

Kim, YH ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated characteristics of high performance GaN-based laser diodes grown on LEO-GaN/sapphire and free-standing GaN substrates. The maximum output power was 300 mW under cw operation. The operation current and voltage were 53 mA and 4.67 V, respectively, for 30 mW-output power. Thermal simulation and junction temperature measurement of laser diodes showed that epi-down bonding was essential for the use of sapphire substrate. It was proposed that Mg diffusion into active layers was responsible for the degradation mechanism of GaN-based laser diodes. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2717 / 2720

页数：4

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