Judd-Ofelt theory;
Temperature sensing;
Up-conversion luminescence;
LiYF4:Tm3+/Yb3+ single crystal;
MU-M EMISSION;
UP-CONVERSION;
ENERGY-TRANSFER;
GROWTH;
HO3+;
SPECTROSCOPY;
TRANSITIONS;
INTENSITIES;
ABSORPTION;
RADIATION;
D O I:
10.1016/j.jlumin.2018.02.016
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
To validate the reliability of Judd-Ofelt results and the influence of involving absorption transition number, the Judd-Ofelt calculations, in which various transitions were adopted, were carried out for Tm3+ doped LiYF4 single crystal. It was found that introducing more transitions into the calculation procedure might get more reliable results. In order to clarify the feasibility of temperature self-reading in Tm3+/Yb3+ doped LiYF4 single crystal during laser operation, the temperature sensing properties of the single crystal were studied. It was found that the fluorescence intensity ratio of F-3(2) + F-3(3) -> H-3(6) to H-3(4) -> H-3(6) can be used for achieving better temperature detection, and the temperature sensitivity was found much better than that in other materials.
机构:Chinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Yang, Yanmin
Yao, Baoquan
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Yao, Baoquan
Chen, Baojiu
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机构:
Chinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R ChinaChinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Chen, Baojiu
Wang, Cheng
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Wang, Cheng
Ren, Guozhong
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
Ren, Guozhong
Wang, Xiaojun
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Li S.-S.
Xia H.-P.
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机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Xia H.-P.
Dong Y.-M.
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h-index: 0
机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Dong Y.-M.
Fu L.
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机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Fu L.
Gu X.-M.
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h-index: 0
机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Gu X.-M.
Zhang J.-L.
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h-index: 0
机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Zhang J.-L.
Wang D.-J.
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机构:
Key Laboratory of Photoelectronic Materials, Ningbo University, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Wang D.-J.
Jiang H.-C.
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机构:
Department of Physics, Dalian Maritime University, DalianKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo
Jiang H.-C.
Chen B.-J.
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h-index: 0
机构:
Ningbo Institute of Materials Technology and Engineering, the Chinese Academy of Sciences, NingboKey Laboratory of Photoelectronic Materials, Ningbo University, Ningbo