High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions

For CoFeB/MgO-based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal. At high junction bias close to 1 V, the probability of magnetic switching in spin-torque-driven switches sometimes appears to decrease. This is shown to be due to a backhopping behavior occurring at high bias, and it is asymmetric in bias voltage, being more pronounced in the bias direction for antiparallel-to-parallel spin-torque switch, i.e., in the direction of electrons tunneling into the free layer. This asymmetry hints at processes involving hot electrons within the free-layer nanomagnet. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3058614]