Planar anisotropic oxidation of graded AlGaAs for high resolution vertical-wall current and light guiding in laser diodes

被引：0

作者：

Evans, PW ^{[1
]}

Holonyak, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECT,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.119918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the planar (top-down) oxidation of graded AlxGa1-xAs upper confining layers of quantum well heterostructures in order to realize high resolution square-edge lasers (or waveguides). A model is developed to facilitate composition grading of AlxGa1-xAs for vertical-wall (square corner or edge) planar oxidation at convenient oxidation times and tolerances. A simple AlGaAs-GaAs quantum well laser structure is used to demonstrate the square-wall (square-corner) planar oxidation method. (C) 1997 American Institute of Physics.

引用

页码：261 / 263

页数：3

共 3 条

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