Investigation of high hole concentration Mg-doped InGaN epilayer

被引：1

作者：

Liu Nai-Xin ^{[1
]}

Wang Huai-Bing ^{[1
]}

Liu Jian-Ping ^{[1
]}

Niu Nan-Hui ^{[1
]}

Zhang Nian-Guo ^{[1
]}

Li Tong ^{[1
]}

Xing Yan-Hui ^{[1
]}

Han Jun ^{[1
]}

Guo Xia ^{[1
]}

Shen Guang-Di ^{[1
]}

机构：

[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Sch Elect Informat & Control Engn, Beijing 100022, Peoples R China

来源：

ACTA PHYSICA SINICA | 2006年 / 55卷 / 09期

关键词：

InGaN : Mg; high hole concentration; photoluminesce; metalorganic chemical vapor deposition;

D O I：

10.7498/aps.55.4951

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated the optical and electrical properties of Mg-doped InxGa1-xN (0 <= x <= 0.3) grown by metalorganic chemical vapor deposition with different In and Mg contents. When the Mg doping concentration was fixed, the hole concentration of samples, increased remarkably with the elevation of In mole fraction. The highest hole concentration achieved was 2.4 x 10(19) cm(-3), the doping efficiency increased nearly by two orders. We explained the carrier transition mechanism with the help of the photoluminesce spectra. In addition, we obtained the activation energy of Mg and the band position of deep donor in InGaN:Mg samples.

引用

页码：4951 / 4955

页数：5

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