Interaction of thin silicon layers with the (0001) surface of rare-earth metals

被引：1
|
作者：
Shikin, AM [1 ]
Grigor'ev, AY [1 ]
Prudnikova, GV [1 ]
Vyalykh, DV [1 ]
Molodtsov, SL [1 ]
Adamchuk, VK [1 ]
机构：
[1] St Petersburg State Univ, Inst Phys, Petrodvorets Branch, Petrodvorets 198904, Russia
来源：
PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1131322
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic and crystalline structures of the systems formed upon deposition of silicon layers onto the Gd(0001) and Dy(0001) surfaces of single-crystal films annealed subsequently at T = 450-500 degrees C have been studied by low-energy electron diffraction (LEED) and also by the Auger electron and angle-resolved photoelectron spectroscopy of the valence band and the Si(2p) core level. It is shown that the systems thus produced can be described as starting single-crystal films of Gd and Dy, with 3D islands of the silicides of these metals on the surface of the corresponding metal films. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：973 / 980
页数：8
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