Field electron emission from individual diamond cone formed by plasma etching

被引:36
|
作者
Wang, Q.
Wang, Z. L.
Li, J. J.
Huang, Y.
Li, Y. L.
Gu, C. Z. [1 ]
Cui, Z.
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2266991
中图分类号
O59 [应用物理学];
学科分类号
摘要
Field electron emission properties of individual diamond cone were investigated using a customized double-probe scanning electron microscope system. The diamond cone was formed by maskless ion sputtering process in bias-assisted hot filament chemical vapor deposition system. The as-formed sharp diamond cone coated with high-sp(2)-content amorphous carbon exhibited high emission current of about 80 mu A at an applied voltage of 100 V. The field emission was stable and well in consistent with the conventional Fowler-Nordheim emission mechanism, due to a stabilization process in surface work function. It has demonstrated the possibility of using individual diamond cone as a point electron emission source, because of its high field electron emission ability and stable surface state after the process of work function stabilization. (c) 2006 American Institute of Physics.
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页数:3
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