Thermoelectric power of MgB2-xBex -: art. no. 214534

被引:15
|
作者
Ahn, JS [1 ]
Choi, ES
Kang, W
Singh, DJ
Han, M
Choi, EJ
机构
[1] Seoul Natl Univ, Ctr Strongly Correlated Mat Res, Seoul 151742, South Korea
[2] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[3] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC USA
[4] Seoul Natl Univ, Dept Phys, Seoul 130743, South Korea
关键词
D O I
10.1103/PhysRevB.65.214534
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated thermoelectric power S(T) of MgB2-xBex (x=0, 0.2, 0.3, 0.4, and 0.6). S(T) decreases systematically with x, suggesting that the hole density increases. Our band calculation shows that the increase occurs in the sigma band. With the hole doping, T-c decreases. Implication of this phenomenon is discussed within the BCS framework. While the Mott formula explains only the linear part of S(T) at low temperature, incorporation of electron-phonon interaction enables us to explain S(T) over wide temperature range including the anomalous behavior at high temperature.
引用
收藏
页码:2145341 / 2145345
页数:5
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