Resistive switching in polymethyl methacrylate thin films

被引：45

作者：

Mangalam, Jimmy ^{[1
]}

Agarwal, Shivani ^{[2
]}

Resmi, A. N. ^{[2
]}

Sundararajan, M. ^{[3
]}

Jinesh, K. B. ^{[2
]}

机构：

[1] Amity Univ, Amity Inst Nanotechnol, Noida 201301, Uttar Pradesh, India

[2] Indian Inst Space Sci & Technol IIST, Thiruvananthapuram 695547, Kerala, India

[3] NIIST, Thiruvananthapuram 695547, Kerala, India

来源：

ORGANIC ELECTRONICS | 2016年 / 29卷

关键词：

ReRAM; Electrical bistability; PMMA; Resistive switching; MEMORIES MATERIALS; DYNAMIC PROCESSES; PERFORMANCE; CONDUCTION; DEVICES;

D O I：

10.1016/j.orgel.2015.11.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin of the resistive switching in Polymethyl methacrylate (PMMA) films is studied in this work, analysing the switching mechanism of Ag/PMMA/FTO devices. Significant improvement in the performance occurs upon annealing the sample, indicating that the evaporation of the solvent plays a significant role in the memory behaviour of the devices. The shift in the space-charge-limited conduction regime after the set process shows that the electron mobility has been enhanced by two orders of magnitude upon switching. Voltage stress analyses show that the switching from high-resistive phase to low resistive phase occurs only when the silver electrode is positively biased, which confirms that the origin of switching is Ag+ filament formation through PMMA. The performance of the devices at different temperatures shows that the set and reset voltages increase with temperature. This observation is explained based on the vitrification of the PMMA layer as a result of the increased evaporation of the solvent at higher temperatures. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：33 / 38

页数：6

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