Phonon drag in disordered films and structures

被引:4
|
作者
Sergeev, A [1 ]
Mitin, V [1 ]
机构
[1] Wayne State Univ, Dept ECE, Detroit, MI 48202 USA
关键词
phonon-drag thermopower; disorder;
D O I
10.1016/S0921-4526(02)00484-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Employing the quantum transport equation, we investigate the effect of electronic disorder on the phonon-drag thermopower. We consider the electron-phonon interaction via the deformation potential, which is strongly renormalized due to elastic electron scattering. The scattering potential of impurities, boundaries and defects is modeled by quasistatic scatterers and vibrating scatterers, which move in the same way as host atoms. In thin films, micro and nanostructures of the phonons relax mainly in a substrate, and the phonon-drag thermopower substantially depends on the character of electron scatterers. Vibrating scatterers decrease thermopower, while quasistatic scatterers (e.g. rigid boundaries) increase it. These changes in thermopower correlate to the disorder-induced modification of the electron-phonon relaxation rate. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:276 / 278
页数:3
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