Effect of Ag doping on the photoluminescence properties of ZnO films

被引：26
|
作者：
Liu, Kaipeng [1 ]
Yang, Beifang [1 ]
Yan, Hongwei [1 ]
Fu, Zhengping [1 ]
Wen, Meiwang [1 ]
Chen, Youjun [1 ]
Zuo, Jian [2 ]
机构：
[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China
来源：
JOURNAL OF LUMINESCENCE | 2009年 / 129卷 / 09期
关键词：
ZnO films; Ag-doped; Photoluminescence; Ultrasonic spray pyrolysis; OPTICAL-PROPERTIES; THIN-FILMS; EMISSION; DEPOSITION; CU;
D O I：
10.1016/j.jlumin.2009.04.021
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
ZnO:Ag films were grown on Si (100) substrates by ultrasonic spray pyrolysis at various substrate temperatures. The effect of deposition temperature on the structural and the room temperature photoluminescence (RT-PL) properties of ZnO:Ag films was studied. With the deposition temperature rising to 550 degrees C, the intensity of the near-band edge (NBE) emission at 378 nm decreased and a new emission peak at 399 nm was observed. On the basis of the X-ray diffraction pattern (XRD), the X-ray photoelectron (XPS) spectra of ZnO:Ag films, and the effects of annealing on the PL, we suggest that the 399 nm emission should be attributed to the electron transition from the conduction band to Ag-zn-related complexes defects radiative centers above the valence band. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：969 / 972
页数：4
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