Structural characteristics of HfO2 films grown by e-beam evaporation

被引：12
|
作者：
Yan, ZJ
Wang, YY [1 ]
Xu, R
Jiang, ZM
机构：
[1] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
来源：
ACTA PHYSICA SINICA | 2004年 / 53卷 / 08期
关键词：
high-k dielectric film; HfO2; e-beam evaporation;
D O I：
10.7498/aps.53.2771
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
High-k dielectric HfO2 films were deposited on p-type Si ( 100) substrates by e-beam evaporation. The composition of the films is determined to be stoichiometric. The structure changes from almost amorphous to polycrystalline after annealing. The films have very flat surface (rms roughness less than 0.3 nm) and no voids appear even after high-temperature annealing, indicating a good thermal stability. The refractive index of HfO2 film is 2.09 (at 600 nm). The dielectric constant is 19. All the characteristics show that e-beam evaporation is a good method to deposit HfO2 thin films as dielectric.
引用
收藏
页码：2771 / 2774
页数：4
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