Study of the modulated spectra of dilute GaNxAs1-x(x≤0.03) thin films

被引：3

作者：

Wang Chong ^{[1
]}

Chen Ping-Ping ^{[1
]}

Liu Zhao-Lin ^{[1
]}

Li Tian-Xin ^{[1
]}

Xia Chang-Sheng ^{[1
]}

Chen Xiao-Shuang ^{[1
]}

Lu Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

ACTA PHYSICA SINICA | 2006年 / 55卷 / 07期

关键词：

piezomodulated reflectance; GaNxAs1-x films; molecular beam epitaxy;

D O I：

10.7498/aps.55.3636

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dilute GaNxAs1-x thin films with N concentration from 0.0 % to 3 % have been grown by molecular beam epitaxy. Piezomodulated reflectance (PzR) spectra of these thin films have been measured at room temperature, and optical transitions in PzR spectra have been well resolved. The N-related transition of E-1 + Delta(1) + Delta(N) had been observed in PzR spectrum of GaN0.005As0.995 and GaN0.01 As-0.99 films. The well resolved split between heavy hole and light hole of Gamma valence band is shown in PzR when the N doping level is up to I %. The N concentration dependence of transition energies supports the model that both E and E* originate from the L conductive band at room temperature.

引用

页码：3636 / 3641

页数：6

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