Electric-field-aligned growth of single-walled carbon nanotubes on surfaces

被引:237
|
作者
Ural, A [1 ]
Li, YM
Dai, HJ
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1518773
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aligned single-walled carbon nanotubes are grown onto the surfaces of SiO2/Si substrates in electric fields established across patterned metal electrodes. Calculations of the electric field distribution under the designed electrode structures, the directing ability of electric fields, and the prevention of surface van der Waals interactions are used to rationalize the aligned growth. The capability of synthesizing oriented single-walled nanotubes on surfaces shall open up many opportunities in organized architectures of nanotubes for molecular electronics. (C) 2002 American Institute of Physics.
引用
收藏
页码:3464 / 3466
页数:3
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