Selective Growth of CdTe on Nano-patterned CdS via Close-Space Sublimation

被引:11
|
作者
Aguirre, Brandon A. [1 ,5 ]
Zubia, David [1 ]
Ordonez, Rafael [1 ]
Anwar, Farhana [1 ]
Prieto, Heber [1 ]
Sanchez, Carlos A. [1 ]
Salazar, Maria T. [2 ]
Pimentel, Alejandro. A. [3 ]
Michael, Joseph R. [3 ]
Zhou, Xiaowang [4 ]
Mcclure, John C. [1 ]
Nielson, Gregory N. [5 ]
Cruz-Campa, Jose L. [5 ]
机构
[1] Univ Texas El Paso, El Paso, TX 79968 USA
[2] Sandia Natl Labs, MESAFAB Operat, Albuquerque, NM 87185 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Sandia Natl Labs, Livermore, CA USA
[5] Sandia Natl Labs, MEMS Technol, Albuquerque, NM 87185 USA
基金
美国国家科学基金会;
关键词
CdTe; solar cells; close space sublimation; nanoheteroepitaxy; selective growth;
D O I
10.1007/s11664-014-3104-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Selective-area deposition of CdTe on CdS via close-space sublimation is used to study the effect of window size (2 mu m and 300 nm) on grain growth. The basic fabrication procedures for each of the layers (CdS, SiO2, and CdTe) and for achieving selective-area growth are presented. Selective-area growth of both micro- and nano-scale CdTe islands on CdS substrates using close-spaced sublimation is demonstrated. Scanning electron microscopy and electron backscatter diffraction microstructure analysis show that the micro-scale CdTe islands remain polycrystalline. However, when the island size is reduced to 300 nm, single crystal CdTe can be achieved within the windows. The CdTe grains were most often in the (101) orientation for both the micro- and nano-sized CdTe islands.
引用
收藏
页码:2651 / 2657
页数:7
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